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March 2013
FDA8440
N-Channel Logic Level
40 V, 100 A, 2.1 m Ω
PowerTrench ? MOSFET
tm
Features
? R DS(on) = 1.46 m Ω ( Typ.) @ V GS = 10 V, I D = 80 A
? Q G(tot) = 345 nC (Typ.) @ V GS = 10 V
? Low Miller Charge
? Low Q rr Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
Applications
? Power tools
? Motor drives and Uninterruptible Power Supplies
? Synchronous Rectification
? Battery Protection Circuit
? 160A Guarantee for 2 sec
? RoHS Compliant
D
G
G
D
S
TO-3PN
S
MOSFET Maximum Ratings T C
= 25 o C unless otherwise noted
Symbol
V DSS
V GSS
I D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
- Continuous (T C = 155 o C)
- Continuous (T A = 25 o C, V GS = 10V, R θ JA = 40 o C/W )
- Pulsed
FDA8440
40
±20
100
30
500
Unit
V
V
A
A
A
E AS
P D
Single Pulsed Avalanche Energy
Power dissipation
Derate above 25 o C
(Note 1)
1682
306
2.04
mJ
W
W/ o C
T J, T STG
Operating and Storage Temperature
-55 to +175
o
C
Thermal Characteristics
R θ JC
Thermal Resistance, Junction to Case, Max.
0.49
o C/W
R θ JA
Thermal Resistance, Junction to Ambient, Max.
(Note 2)
40
o
C/W
?2007 Fairchild Semiconductor Corporation
FDA8440 Rev. C0
1
www.fairchildsemi.com
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